Si2315BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P DM
0.1
0.05
0.02
t 1
t 2
1. Duty Cycle, D =
t 1
t 2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72014 .
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
www.vishay.com
5
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相关代理商/技术参数
SI2315DS 制造商:Vishay Siliconix 功能描述:MOSFET P SOT-23
SI2315DS 制造商:Vishay Siliconix 功能描述:MOSFET P SOT-23
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SI2315DS-T1-E3 功能描述:MOSFET 12V 3.5A 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2316BDS 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
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SI2316BDS-T1-GE3 功能描述:MOSFET 30V 4.5A 1.66W 50mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube